Nernst–Planck–Poisson analysis of electrolyte-gated organic field-effect transistors

Abstract Electrolyte-gated organic field-effect transistors (EGOFETs) represent a class of thin-film suited for sensing and biosensing in aqueous media, often at physiological conditions. The EGOFET device includes electrodes an semiconductor channel direct contact with electrolyte. Upon operation, electric double layers are formed along the gate-electrolyte channel-electrolyte interfaces, but ions do not penetrate channel. This mode operation allows devices to run low voltages speed corresponding rate forming layers. Currently, there is lack detailed quantitative model EGOFETs that can predict performance based on geometry material parameters. In present paper, first time, proposed utilizing Nernst-Planck-Poisson equations describe, equal footing, both polymer electrolyte regions configuration. generated calculations exhibit semi-qualitative agreement experimentally measured output transfer curves.